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ONSEMIFDB52N20TMTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 52AMaximum Power Dissipation 357W
Mã nhà sản xuất
FDB52N20TM
Thương hiệu
Mã kho
166-2543
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild's proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. MOSFET Transistors, ON Semi ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild's proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDB52N20TM
Channel Type N
Maximum Continuous Drain Current 52A
Maximum Drain Source Voltage 200V
Package Type D2PAK (TO-263)
Series UniFET
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 49mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 357W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Typical Gate Charge @ Vgs 49 nC @ 10 V
Maximum Operating Temperature +150°C
Number of Elements per Chip 1
Transistor Material Si
Length 9.98mm
Width 10.16mm
Height 4.572mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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