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ONSEMIFDG6303NTransistor: N-MOSFET x2

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 500mAMaximum Power Dissipation 300 mW
Mã nhà sản xuất
FDG6303N
Thương hiệu
Mã kho
178-7601
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Enhancement Mode Dual MOSFET, Fairchild Semiconductor Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. MOSFET Transistors, ON Semi ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FDG6303N
Channel Type N
Maximum Continuous Drain Current 500mA
Maximum Drain Source Voltage 25V
Package Type SOT-363
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 770mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.65V
Maximum Power Dissipation 300 mW
Transistor Configuration Isolated
Maximum Gate Source Voltage 8V
Typical Gate Charge @ Vgs 1.64 nC @ 5 V
Length 2mm
Width 1.25mm
Number of Elements per Chip 2
Maximum Operating Temperature +150°C
Transistor Material Si
Height 1mm
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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