Skip to content
About us Liên hệ Thông tin xuất hóa đơn cho Chánh Vinh Số tài khoản Ảnh hàng về
FJB102TM 186-8055

ONSEMIFJB102TMTransistor: NPN

Maximum Collector Emitter Voltage 100VMaximum Emitter Base Voltage 5VMaximum Power Dissipation 80WMinimum DC Current Gain 200
Mã nhà sản xuất
FJB102TM
Thương hiệu
ONSEMI
Mã kho
186-8055
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

FJB102: 100V High Voltage Power Darlington Transistor High DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial Use Applications This product is general usage and suitable for many different applications.

FJB102: 100V High Voltage Power Darlington Transistor

High DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.)

Low Collector-Emitter Saturation Voltage

High Collector-Emitter Sustaining Voltage

Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Industrial Use

Applications

This product is general usage and suitable for many different applications.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FJB102TM
Transistor Type NPN
Maximum Collector Emitter Voltage 100V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Maximum Power Dissipation 80W
Minimum DC Current Gain 200
Transistor Configuration Dual
Maximum Emitter Base Voltage 5V
Pin Count 2 + Tab
Number of Elements per Chip 2
Dimensions 10.67 x 9.65 x 4.58mm
Maximum Operating Temperature +150°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare