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ONSEMIFJI5603DTUTransistor: NPN

Maximum Collector Emitter Voltage 800VMaximum Emitter Base Voltage 12VMaximum Power Dissipation 100WMinimum DC Current Gain 20
Mã nhà sản xuất
FJI5603DTU
Thương hiệu
Mã kho
186-8073
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

FJI5603D: NPN Silicon Transistor Wide Safe Operating Area Small Variance in Storage Time Built-in Free Wheeling Diode High Voltage and High Speed Power Switch Application Electronic Ballast Application Applications This product is general usage and suitable for many different applications.

FJI5603D: NPN Silicon Transistor

Wide Safe Operating Area

Small Variance in Storage Time

Built-in Free Wheeling Diode

High Voltage and High Speed Power Switch Application

Electronic Ballast Application

Applications

This product is general usage and suitable for many different applications.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. FJI5603DTU
Transistor Type NPN
Maximum Collector Emitter Voltage 800V
Package Type TO-262
Mounting Type Through Hole
Maximum Power Dissipation 100W
Minimum DC Current Gain 20
Transistor Configuration Single
Maximum Emitter Base Voltage 12V
Pin Count 3 + Tab
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Dimensions 10.29 x 4.83 x 9.65mm

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