ONSEMIMC74VHC00DTGIC: digital
The MC74VHC00 is an advanced high speed CMOS 2-input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems. High Speed: tPD = 3.7ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 2μA (Max) at TA = 25 C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 0.8V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V, Machine Model > 200V Chip Complexity: 32 FETs or 8 Equivalent Gates
The MC74VHC00 is an advanced high speed CMOS 2-input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
High Speed: tPD = 3.7ns (Typ) at VCC = 5V
Low Power Dissipation: ICC = 2μA (Max) at TA = 25 C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2V to 5.5V Operating Range
Low Noise: VOLP = 0.8V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V, Machine Model > 200V
Chip Complexity: 32 FETs or 8 Equivalent Gates