ONSEMIMC74VHC541DTGIC: digital
The MC74VHC541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC541 is a non-inverting type. When either OE1 or OE2 are high, the terminal outputs are in the high impedance state. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems. High Speed: tPD = 3.7ns (Typ) at VCC = 5V Low Power Dissipation: ICC = 4μA (Max) at TA = 25 C High Noise Immunity: VNIH = VNIL = 28% VCC Power Down Protection Provided on Inputs Balanced Propagation Delays Designed for 2V to 5.5V Operating Range Low Noise: VOLP = 1.2V (Max) Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V, Machine Model > 200V Chip Complexity: 134 FETs or 33.5 Equivalent Gates Pb-Free Packages are Available
The MC74VHC541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The MC74VHC541 is a non-inverting type. When either OE1 or OE2 are high, the terminal outputs are in the high impedance state.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.
High Speed: tPD = 3.7ns (Typ) at VCC = 5V
Low Power Dissipation: ICC = 4μA (Max) at TA = 25 C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2V to 5.5V Operating Range
Low Noise: VOLP = 1.2V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V, Machine Model > 200V
Chip Complexity: 134 FETs or 33.5 Equivalent Gates
Pb-Free Packages are Available