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ONSEMIMMBT589LT1GTransistor: PNP

Maximum Collector Emitter Voltage -30VMaximum Emitter Base Voltage -5V dcMaximum Power Dissipation 710 mWMinimum DC Current Gain 100
Mã nhà sản xuất
MMBT589LT1G
Thương hiệu
Mã kho
186-7174
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space Pb-Free Packages are Available NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Low rDS(on) Provides Higher Efficiency and Extends Battery Life

Miniature SOT-23 Surface Mount Package Saves Board Space

Pb-Free Packages are Available

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. MMBT589LT1G
Transistor Type PNP
Maximum Collector Emitter Voltage -30V
Package Type SOT-23
Mounting Type Surface Mount
Maximum Power Dissipation 710 mW
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Emitter Base Voltage -5V dc
Pin Count 3
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Dimensions 3.04 x 1.4 x 1.01mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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