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ONSEMIMMBTA13LT1GTransistor: NPN

Maximum Base Emitter Saturation Voltage 1.5VMaximum Collector Base Voltage 30VMaximum Collector Cut-off Current 100nAMaximum Collector Emitter Saturation Voltage 1.5V
Mã nhà sản xuất
MMBTA13LT1G
Thương hiệu
Mã kho
781-4279
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

NPN Darlington Transistors, ON Semiconductor Standards Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. The ON Semiconductor MMBTA13L is the NPN silicon Darlington amplifier transistors. The package size of transistor is the SOT−23. These devices are Pb−free Halogen free RoHS compliant

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MMBTA13L is the NPN silicon Darlington amplifier transistors. The package size of transistor is the SOT−23.

These devices are Pb−free

Halogen free

RoHS compliant

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. MMBTA13LT1G
Transistor Type NPN
Maximum Continuous Collector Current 300mA
Maximum Collector Emitter Voltage 30V
Maximum Emitter Base Voltage 10V
Package Type SOT-23 (TO-236
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Number of Elements per Chip 1
Minimum DC Current Gain 20000
Maximum Base Emitter Saturation Voltage 1.5V
Maximum Collector Base Voltage 30V
Maximum Collector Emitter Saturation Voltage 1.5V
Maximum Collector Cut-off Current 100nA
Minimum Operating Temperature -55°C
Height 1.01mm
Width 1.4mm
Maximum Power Dissipation 300 mW
Maximum Operating Temperature +150°C
Dimensions 3.04 x 1.4 x 1.01mm
Length 3.04mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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