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ONSEMIMUN5212DW1T1GTransistor: NPN x2

Base-Emitter Resistor 22kΩMaximum Collector Emitter Voltage 50VMaximum DC Collector Current 100mAMaximum Power Dissipation 385 mW
Mã nhà sản xuất
MUN5212DW1T1G
Thương hiệu
Mã kho
186-8437
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. Simplifies Circuit Design Reduces Board Space Reduces Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable These Devices are Pb-Free, Halogen Free/BFR Free

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

These Devices are Pb-Free, Halogen Free/BFR Free

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. MUN5212DW1T1G
Transistor Type NPN
Maximum DC Collector Current 100mA
Maximum Collector Emitter Voltage 50V
Package Type SOT-363
Mounting Type Surface Mount
Maximum Power Dissipation 385 mW
Transistor Configuration Dual
Pin Count 6
Number of Elements per Chip 2
Typical Resistor Ratio 1
Typical Input Resistor 22kΩ
Dimensions 2.2 x 1.35 x 1mm
Maximum Operating Temperature +150°C
Base-Emitter Resistor 22kΩ

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