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ONSEMINCP5111DR2GIC: driver

Case SO8Impulse rise time 160nsKind of integrated circuit gate driverKind of package reel
Mã nhà sản xuất
NCP5111DR2G
Thương hiệu
Mã kho
NCP5111DR2G
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA

THÔNG SỐ KỸ THUẬT
Manufacturer ONSEMI
Manufacturer Part No. NCP5111DR2G
Type of integrated circuit driver
Topology IGBT half-bridge, MOSFET half-bridge
Kind of integrated circuit gate driver, high-/low-side
Case SO8
Output current -500...250mA
Number of channels 2
Mounting SMD
Operating temperature -40...125°C
Impulse rise time 160ns
Pulse fall time 75ns
Kind of package reel, tape
Voltage class 600V
Protection undervoltage UVP
Supply voltage 10...20V DC
Gross weight 0.1 g

Tài liệu: Documentation EN

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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