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ONSEMINJL1302DGTransistor: PNP + diode

Maximum Collector Base Voltage 260VMaximum Collector Emitter Voltage -260VMaximum DC Collector Current -25AMaximum Emitter Base Voltage 5V
Mã nhà sản xuất
NJL1302DG
Thương hiệu
Mã kho
184-1157
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Bipolar Power Transistor has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. It can also be used in other applications as a transistor die protection device. Thermally matched bias diode to eliminate thermal runaway Instant thermal bias tracking for superior sound quality Absolute Thermal Integrity High safe operating area Pb-Free Packages are Available Applications: High-fidelity consumer audio products Professional audio amplifiers

The Bipolar Power Transistor has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. It can also be used in other applications as a transistor die protection device.

Thermally matched bias diode to eliminate thermal runaway

Instant thermal bias tracking for superior sound quality

Absolute Thermal Integrity

High safe operating area

Pb-Free Packages are Available

Applications:

High-fidelity consumer audio products

Professional audio amplifiers

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NJL1302DG
Transistor Type PNP
Maximum DC Collector Current -25A
Maximum Collector Emitter Voltage -260V
Package Type TO-264
Mounting Type Through Hole
Maximum Power Dissipation 200W
Transistor Configuration Single
Maximum Collector Base Voltage 260V
Maximum Emitter Base Voltage 5V
Maximum Operating Frequency 1MHz
Pin Count 5
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Dimensions 20.01 x 5.18 x 26.11mm

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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