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ONSEMINSVMMBTH10LT1GTransistor: NPN

Maximum Collector Base Voltage 30V dcMaximum Collector Emitter Voltage 25VMaximum DC Collector Current 500mAMaximum Emitter Base Voltage 25V
Mã nhà sản xuất
NSVMMBTH10LT1G
Thương hiệu
Mã kho
781-5115
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

RF Bipolar Transistors, ON Semiconductor Standards Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.

RF Bipolar Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NSVMMBTH10LT1G
Transistor Type NPN
Maximum DC Collector Current 500mA
Maximum Collector Emitter Voltage 25V
Package Type SOT-23
Mounting Type Surface Mount
Maximum Power Dissipation 225 mW
Transistor Configuration Single
Maximum Collector Base Voltage 30V dc
Maximum Emitter Base Voltage 25V
Maximum Operating Frequency 100MHz
Pin Count 3
Number of Elements per Chip 1
Dimensions 3.04 x 2.64 x 1.11mm
Maximum Operating Temperature +150°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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