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ONSEMINTB095N65S3HFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 36A
Mã nhà sản xuất
NTB095N65S3HF
Thương hiệu
Mã kho
189-0381
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability. 700 V @ TJ = 150 °C Ultra Low Gate Charge (Typ. Qg = 66 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF) Excellent body diode performance (low Qrr, robust body diode) Optimized Capacitance Typ. RDS(on) = 80 mΩHigher system reliability at low temperature operation Lower switching loss Higher system reliability in LLC and Phase shift full bridge circuit Lower peak Vds and lower Vgs oscillation Applications Telecommunication Cloud system Industrial End Products Telecom power Server power EV charger Solar / UPS

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 66 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 569 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 80 mΩHigher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTB095N65S3HF
Channel Type N
Maximum Continuous Drain Current 36A
Maximum Drain Source Voltage 650V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 95mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 272W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Length 10.67mm
Width 9.65mm
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 66 nC @ 10 V
Number of Elements per Chip 1
Minimum Operating Temperature -55°C
Height 4.58mm
Forward Diode Voltage 1.3V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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