Skip to content

ONSEMINTB110N65S3HFTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 30A
Mã nhà sản xuất
NTB110N65S3HF
Thương hiệu
Mã kho
186-1500
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

SUPERFET III MOSFET is ON Semiconductor's brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability. 700 V @ TJ = 150 °C Ultra Low Gate Charge (Typ. Qg = 62 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF) Excellent body diode performance (low Qrr, robust body diode) Optimized Capacitance Typ. RDS(on) = 98 mΩ Higher system reliability at low temperature operation Lower switching loss Higher system reliability in LLC and Phase shift full bridge circuit Lower peak Vds and lower Vgs oscillation Applications Telecommunication Cloud system Industrial End Products Telecom power Server power EV charger Solar / UPS

SUPERFET III MOSFET is ON Semiconductor's brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET's optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 62 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 522 pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 98 mΩ

Higher system reliability at low temperature operation

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

Applications

Telecommunication

Cloud system

Industrial

End Products

Telecom power

Server power

EV charger

Solar / UPS

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTB110N65S3HF
Channel Type N
Maximum Continuous Drain Current 30A
Maximum Drain Source Voltage 650V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 110mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 240W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Maximum Operating Temperature +150°C
Length 10.67mm
Typical Gate Charge @ Vgs 62 nC @ 10 V
Width 9.65mm
Number of Elements per Chip 1
Height 4.58mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.3V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

Compare products

Select 2 or 3 items to compare

Select first item to compare

Select second item to compare

Select third item to compare

Compare