ON SEMICONDUCTORNTBGS1D5N06CN-Channel MOSFET, 267 A, 60 V, 7-Pin D2PAK ON Semiconductor NTBGS1D5N06C
Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 267AMaximum Gate Threshold Voltage 4V
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The ON Semiconductor 60V of power MOSFET used 267A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses