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ONSEMINTD360N80S3ZTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 13AMaximum Gate Threshold Voltage 3.8V
Mã nhà sản xuất
NTD360N80S3Z
Thương hiệu
Mã kho
205-2498
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies. Continuous Drain Current rating is 13A Drain to source on resistance rating is 360mohm Ultra low gate charge Low stored energy in output capacitance 100% avalanche tested Package type is D-PAK

The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.

Continuous Drain Current rating is 13A

Drain to source on resistance rating is 360mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is D-PAK

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTD360N80S3Z
Channel Type N
Maximum Continuous Drain Current 13A
Maximum Drain Source Voltage 800V
Series SUPERFET III
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 360mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.8V
Number of Elements per Chip 1
Transistor Material Si

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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