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ONSEMINTHL040N65S3FTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.3VMaximum Continuous Drain Current 65A
Mã nhà sản xuất
NTHL040N65S3F
Thương hiệu
Mã kho
178-4253
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

SUPERFET III MOSFET is ON Semiconductor's brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Features 700 V @ TJ = 150 Ultra Low Gate Charge (Typ. Qg = 158 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1366pF) Excellent body diode performance (low Qrr, robust body diode) Optimized Capacitance Typ. RDS(on) = 32 mΩ Applications Telecommunication Cloud system Industrial Benefits Higher system reliability at low temperature operation Lower switching loss Lower switching loss Higher system reliability in LLC and Phase shift full bridge circuit Lower peak Vds and lower Vgs oscillation End Products Telecom power Server power EV charger Solar / UPS

SUPERFET III MOSFET is ON Semiconductor's brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

Features

700 V @ TJ = 150

Ultra Low Gate Charge (Typ. Qg = 158 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 1366pF)

Excellent body diode performance (low Qrr, robust body diode)

Optimized Capacitance

Typ. RDS(on) = 32 mΩ

Applications

Telecommunication

Cloud system

Industrial

Benefits

Higher system reliability at low temperature operation

Lower switching loss

Lower switching loss

Higher system reliability in LLC and Phase shift full bridge circuit

Lower peak Vds and lower Vgs oscillation

End Products

Telecom power

Server power

EV charger

Solar / UPS

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTHL040N65S3F
Channel Type N
Maximum Continuous Drain Current 65A
Maximum Drain Source Voltage 650V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 40mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 446W
Transistor Configuration Single
Maximum Gate Source Voltage ±30V
Width 4.82mm
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 158 nC @ 10 V
Length 15.87mm
Maximum Operating Temperature +150°C
Height 20.82mm
Forward Diode Voltage 1.3V
Minimum Operating Temperature -55°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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