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ONSEMINTHL099N60S5Transistor: N-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 33AMaximum Gate Threshold Voltage 4V
Mã nhà sản xuất
NTHL099N60S5
Thương hiệu
Mã kho
230-9089
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency. Ultra Low Gate Charge (Typ. Qg= 48 nC) Low switching loss Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF) Low switching loss Optimized Capacitance Lower peak Vds and lower Vgs oscillation 650 V @ TJ = 150°C Typ. RDS(on) = 79.2 m Ω 100% Avalanche Tested RoHS Compliant Internal Gate Resistance: 6.9 Ω

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.

Ultra Low Gate Charge (Typ. Qg= 48 nC)

Low switching loss

Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)

Low switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

650 V @ TJ = 150°C

Typ. RDS(on) = 79.2 m Ω

100% Avalanche Tested

RoHS Compliant

Internal Gate Resistance: 6.9 Ω

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTHL099N60S5
Channel Type N
Maximum Continuous Drain Current 33A
Maximum Drain Source Voltage 600V
Series SUPERFET V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 0.099Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Number of Elements per Chip 1
Transistor Material Si

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