ONSEMINTJD4158CT1GTransistor: N/P-MOSFET

Channel Mode EnhancementChannel Type NMaximum Continuous Drain Current 250 mAMaximum Gate Threshold Voltage 1.5V

Mã nhà sản xuất

NTJD4158CT1G

Thương hiệu

ONSEMI

Mã kho

780-0614

Liên hệ

📩 Liên hệ để có giá tốt: [email protected]

Dual N/P-Channel MOSFET, ON Semiconductor The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel's into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi's trench technology. MOSFET Transistors, ON Semiconductor

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel's into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi's trench technology.

MOSFET Transistors, ON Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer	onsemi
Manufacturer Part No.	NTJD4158CT1G
Channel Type	N, P
Maximum Continuous Drain Current	250 mA, 880 mA
Maximum Drain Source Voltage	20 V, 30 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	2.5 Ω, 500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	270 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -12 V, +12 V, +20 V
Width	1.35mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150°C
Transistor Material	Si
Length	2.2mm
Typical Gate Charge @ Vgs	0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Height	1mm
Minimum Operating Temperature	-55°C

THÔNG SỐ KỸ THUẬT

Manufacturer

onsemi

Manufacturer Part No.

NTJD4158CT1G

Channel Type

N, P

Maximum Continuous Drain Current

250 mA, 880 mA

Maximum Drain Source Voltage

20 V, 30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

2.5 Ω, 500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

270 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, -12 V, +12 V, +20 V

Width

1.35mm

Number of Elements per Chip

Maximum Operating Temperature

+150°C

Transistor Material

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V, 2.2 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55°C

ONSEMINTJD4158CT1GTransistor: N/P-MOSFET

Dual N/P-Channel MOSFET, ON Semiconductor

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