ONSEMINTMFS6H800NT1GTransistor: N-MOSFET

ON Semiconductor MOSFET The ON Semiconductor DFN5 surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 2.1mohm at a gate-source voltage of 10V. It has continuous drain current of 203A and maximum power dissipation of 200W. The minimum and a maximum driving voltage for this transistor are 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. Features and Benefits Compact design Lead (Pb) free Low QG and capacitance Low QG and capacitance to minimize driver losses Low RDS (on) to minimize conduction losses Minimize conduction losses Minimize driver losses Operating temperature ranges between -55°C and 175°C Small footprint (5x6 mm) Applications 48V systems DC/DC converter Load switch Motor control Power switches (high side driver, low side driver, H-bridges etc.) Switching power supplies Synchronous rectifier Certifications ANSI/ESD S20.20:2014 BS EN 61340-5-1:2007