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ONSEMINTMFSC0D9N04CLTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 313A
Mã nhà sản xuất
NTMFSC0D9N04CL
Thương hiệu
Mã kho
195-2664
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

This N-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Top and bottom sided exposed in standard 5x6mm pin-out Improved thermal dissipation through top and bottom side of the package Ultra low RDS-on Reduced conduction loss Reduced capacitances and package inductance Reduced switching loss Application Synchronous Rectifier in AC-DC and DC-DC power supplies Motor Switch Load switch

This N-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Top and bottom sided exposed in standard 5x6mm pin-out

Improved thermal dissipation through top and bottom side of the package

Ultra low RDS-on

Reduced conduction loss

Reduced capacitances and package inductance

Reduced switching loss

Application

Synchronous Rectifier in AC-DC and DC-DC power supplies

Motor Switch

Load switch

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTMFSC0D9N04CL
Channel Type N
Maximum Continuous Drain Current 313A
Maximum Drain Source Voltage 40V
Package Type DFN
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 850µΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 167W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Width 5mm
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Length 5.9mm
Typical Gate Charge @ Vgs 143 @ 10 V nC
Height 0.95mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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