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ONSEMINTMJS0D9N04CLTWGTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 330A
Mã nhà sản xuất
NTMJS0D9N04CLTWG
Thương hiệu
Mã kho
189-0485
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Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTMJS0D9N04CLTWG
Channel Type N
Maximum Continuous Drain Current 330A
Maximum Drain Source Voltage 40V
Package Type LFPAK8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 1.2mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 167W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Operating Temperature +175°C
Width 4.9mm
Typical Gate Charge @ Vgs 143 nC @ 10 V
Length 5mm
Height 1.2mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C

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