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ONSEMINTMJS1D0N04CTWGTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 300A
Mã nhà sản xuất
NTMJS1D0N04CTWG
Thương hiệu
Mã kho
189-0506
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK-E Package, Industry Standard These Devices are Pb-Free

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK-E Package, Industry Standard

These Devices are Pb-Free

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTMJS1D0N04CTWG
Channel Type N
Maximum Continuous Drain Current 300A
Maximum Drain Source Voltage 40V
Package Type LFPAK8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 920µΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 166W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Length 5mm
Number of Elements per Chip 1
Width 4.9mm
Typical Gate Charge @ Vgs 86 nC @ 10 V
Maximum Operating Temperature +175°C
Forward Diode Voltage 1.2V
Height 1.2mm
Minimum Operating Temperature -55°C

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