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ONSEMINTMYS8D0N04CTWGTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 49A
Mã nhà sản xuất
NTMYS8D0N04CTWG
Thương hiệu
Mã kho
195-2527
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard These Devices are Pb−Free

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

These Devices are Pb−Free

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTMYS8D0N04CTWG
Channel Type N
Maximum Continuous Drain Current 49A
Maximum Drain Source Voltage 40V
Package Type LFPAK, SOT-669
Mounting Type Surface Mount
Pin Count 4
Maximum Drain Source Resistance 8.1mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 38W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Typical Gate Charge @ Vgs 10 nC @ 10 V
Length 5mm
Width 4.25mm
Number of Elements per Chip 1
Maximum Operating Temperature +175°C
Height 1.15mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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