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ONSEMINTR1P02LT1GTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PForward Diode Voltage 1VMaximum Continuous Drain Current 1.3A
Mã nhà sản xuất
NTR1P02LT1G
Thương hiệu
Mã kho
186-8957
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

These miniature surface mount MOSFETs low RDS(on) ensure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications of these P-Channel Small Signal MOSFETs are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT-23 Surface Mount Package Saves Board Space End Products Computers Printers PCMCIA cards Cellular and Cordless Telephones Applications DC-DC Converters Power Management in Portable and Battery Powered Products

These miniature surface mount MOSFETs low RDS(on) ensure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications of these P-Channel Small Signal MOSFETs are dc-dc converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Low RDS(on) Provides Higher Efficiency and Extends Battery Life

Miniature SOT-23 Surface Mount Package Saves Board Space

End Products

Computers

Printers

PCMCIA cards

Cellular and Cordless Telephones

Applications

DC-DC Converters

Power Management in Portable and Battery Powered Products

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTR1P02LT1G
Channel Type P
Maximum Continuous Drain Current 1.3A
Maximum Drain Source Voltage 20V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 350mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.25V
Minimum Gate Threshold Voltage 0.7V
Maximum Power Dissipation 400 mW
Transistor Configuration Single
Maximum Gate Source Voltage 12V
Length 3.04mm
Number of Elements per Chip 1
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 3.1 nC @ 4.5 V
Width 1.4mm
Height 1.01mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1V
Automotive Standard AEC-Q101

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