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NTS4173PT1G 780-4761

ONSEMINTS4173PT1GTransistor: P-MOSFET

Channel Mode EnhancementChannel Type PMaximum Continuous Drain Current 1.3AMaximum Gate Threshold Voltage 1.5V
Mã nhà sản xuất
NTS4173PT1G
Thương hiệu
ONSEMI
Mã kho
780-4761
Liên hệ
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P-Channel Power MOSFET, 30V to 500V, ON Semiconductor MOSFET Transistors, ON Semiconductor

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTS4173PT1G
Channel Type P
Maximum Continuous Drain Current 1.3A
Maximum Drain Source Voltage 30V
Package Type SOT-323
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 280mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 350 mW
Transistor Configuration Single
Maximum Gate Source Voltage -12 V, +12 V
Transistor Material Si
Maximum Operating Temperature +150°C
Typical Gate Charge @ Vgs 10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Length 2.2mm
Width 1.35mm
Number of Elements per Chip 1
Height 0.9mm
Minimum Operating Temperature -55°C

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