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ONSEMINTTFS6H850NTAGTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 68A
Mã nhà sản xuất
NTTFS6H850NTAG
Thương hiệu
Mã kho
178-4317
Liên hệ
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Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Features Low On-Resistance Low Gate Charge Small Footprint (3x3 mm) Benefits Minimizes Conduction Losses Minimizes Switching Losses Compact Design Applications Reverser Battery protection Power switches (High Side Driver, Low Side Driver, H-Bridges etc.) Synchronous Rectification End Products Motor Control Battery management Switching Power supplies

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.

Features

Low On-Resistance

Low Gate Charge

Small Footprint (3x3 mm)

Benefits

Minimizes Conduction Losses

Minimizes Switching Losses

Compact Design

Applications

Reverser Battery protection

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Synchronous Rectification

End Products

Motor Control

Battery management

Switching Power supplies

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NTTFS6H850NTAG
Channel Type N
Maximum Continuous Drain Current 68A
Maximum Drain Source Voltage 80V
Package Type WDFN
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 9.5mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 107W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Width 3.15mm
Maximum Operating Temperature +175°C
Length 3.15mm
Typical Gate Charge @ Vgs 3.6 nC @ 10 V
Minimum Operating Temperature -55°C
Height 0.75mm
Forward Diode Voltage 1.2V

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