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ONSEMINVH4L045N065SC1Transistor: N-MOSFET

Case TO247-4Drain current 55ADrain-source voltage 650VFeatures of semiconductor devices Kelvin terminal
Mã nhà sản xuất
NVH4L045N065SC1
Thương hiệu
Mã kho
NVH4L045N065SC1
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Transistor: N-MOSFET; SiC; unipolar; 650V; 55A; Idm: 197A; 187W

THÔNG SỐ KỸ THUẬT
Manufacturer ONSEMI
Manufacturer Part No. NVH4L045N065SC1
Type of transistor N-MOSFET
Technology SiC
Polarisation unipolar
Drain-source voltage 650V
Drain current 55A
Pulsed drain current 197A
Power dissipation 187W
Case TO247-4
Gate-source voltage -8...22V
On-state resistance 50mΩ
Mounting THT
Gate charge 105nC
Kind of package tube
Kind of channel enhancement
Features of semiconductor devices Kelvin terminal
Gross weight 5 g

Tài liệu: Documentation EN · Product family

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