ONSEMINVMFD5C446NLT1GTransistor: N-MOSFET x2

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 145A

Mã nhà sản xuất

NVMFD5C446NLT1G

Thương hiệu

ONSEMI

Mã kho

172-3301

Liên hệ

📩 Liên hệ để có giá tốt: [email protected]

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications. Low on-resistance Minimal conduction losses High current capability Robust load performance Voltage overstress safeguard Applications Low Side Driver High Side Driver Motor drive Automotive powertrain Automotive HVAC motors ABS pressure pumps

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications.

Low on-resistance

Minimal conduction losses

High current capability

Robust load performance

Voltage overstress safeguard

Applications

Low Side Driver

High Side Driver

Motor drive

Automotive powertrain

Automotive HVAC motors

ABS pressure pumps

THÔNG SỐ KỸ THUẬT
Manufacturer	onsemi
Manufacturer Part No.	NVMFD5C446NLT1G
Channel Type	N
Maximum Continuous Drain Current	145A
Maximum Drain Source Voltage	40V
Series	NVMFD5C446NL
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	3.9mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	125W
Maximum Gate Source Voltage	±20V
Number of Elements per Chip	2
Width	5.1mm
Maximum Operating Temperature	+175°C
Typical Gate Charge @ Vgs	54 nC @ 10 V
Length	6.1mm
Height	1.05mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55°C
Forward Diode Voltage	1.2V

THÔNG SỐ KỸ THUẬT

Manufacturer

onsemi

Manufacturer Part No.

NVMFD5C446NLT1G

Channel Type

Maximum Continuous Drain Current

145A

Maximum Drain Source Voltage

40V

Series

NVMFD5C446NL

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

Maximum Drain Source Resistance

3.9mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125W

Maximum Gate Source Voltage

±20V

Number of Elements per Chip

Width

5.1mm

Maximum Operating Temperature

+175°C

Typical Gate Charge @ Vgs

54 nC @ 10 V

Length

6.1mm

Height

1.05mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55°C

Forward Diode Voltage

1.2V

ONSEMINVMFD5C446NLT1GTransistor: N-MOSFET x2

Added to your cart:

Compare products