ONSEMINVMFD5C668NLT1GTransistor: N-MOSFET x2
Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 68A
Liên hệ
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection PPAP Capable These Devices are Pb−Free
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
PPAP Capable
These Devices are Pb−Free