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ONSEMINVMFS5C468NT1GTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 35A
Mã nhà sản xuất
NVMFS5C468NT1G
Thương hiệu
Mã kho
178-4638
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications. Features Small Footprint (5 x 6 mm) Low RDS(on) Low Qg and Capacitance Wettable Flank Option PPAP capable Benefits Compact Design Minimize Conduction Losses Minimize Driver Losses Enhanced Optical Inspection Applications Reverser Battery protection Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.) Switching Power Supplies End Products Solenoid Driver – ABS, Fuel Injection Motor Control – EPS, Wipers, Fans, Seats, etc. Load Switch – ECU, Chassis, Body

Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.

Features

Small Footprint (5 x 6 mm)

Low RDS(on)

Low Qg and Capacitance

Wettable Flank Option

PPAP capable

Benefits

Compact Design

Minimize Conduction Losses

Minimize Driver Losses

Enhanced Optical Inspection

Applications

Reverser Battery protection

Power Switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Switching Power Supplies

End Products

Solenoid Driver – ABS, Fuel Injection

Motor Control – EPS, Wipers, Fans, Seats, etc.

Load Switch – ECU, Chassis, Body

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NVMFS5C468NT1G
Channel Type N
Maximum Continuous Drain Current 35A
Maximum Drain Source Voltage 40V
Package Type DFN
Mounting Type Surface Mount
Pin Count 5
Maximum Drain Source Resistance 12mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 28W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Width 6.1mm
Typical Gate Charge @ Vgs 7.9 nC @ 10 V
Length 5.1mm
Maximum Operating Temperature +175°C
Number of Elements per Chip 1
Height 1.05mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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