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ONSEMINVMFS6H801NT1GTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 157A
Mã nhà sản xuất
NVMFS6H801NT1G
Thương hiệu
Mã kho
178-4308
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications. Features Small Footprint (5x6 mm) Low RDS(on) Low QG and Capacitance NVMFS6H801NWF - Wettable Flank Option PPAP capable Benefits Compact Design Minimize Conduction Losses Minimize Driver Losses Enhanced Optical Inspection Applications Switching power supplies Power switches (High Side Driver, Low Side Driver, H-Bridges etc.) 48V systems End Products Motor Control DC/DC converter Load Switch

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.

Features

Small Footprint (5x6 mm)

Low RDS(on)

Low QG and Capacitance

NVMFS6H801NWF - Wettable Flank Option

PPAP capable

Benefits

Compact Design

Minimize Conduction Losses

Minimize Driver Losses

Enhanced Optical Inspection

Applications

Switching power supplies

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

48V systems

End Products

Motor Control

DC/DC converter

Load Switch

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NVMFS6H801NT1G
Channel Type N
Maximum Continuous Drain Current 157A
Maximum Drain Source Voltage 80V
Package Type DFN
Mounting Type Surface Mount
Pin Count 5
Maximum Drain Source Resistance 2.8mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 166W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Width 6.1mm
Length 5.1mm
Typical Gate Charge @ Vgs 64 nC @ 10 V
Maximum Operating Temperature +175°C
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V
Height 1.05mm

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