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ONSEMINVMFS6H824NT1GTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 103A
Mã nhà sản xuất
NVMFS6H824NT1G
Thương hiệu
Mã kho
185-9162
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications. Small Footprint (5x6 mm) Low RDS(on) Low QG and Capacitance NVMFS6H818NWF − Wettable Flank Option PPAP Capable Compact Design Minimize Conduction Losses Minimize Driver Losses Enhanced Optical Inspection Automotive Qualified Applications Switching power supplies Power switches (High Side Driver, Low Side Driver, H-Bridges etc.) 48V systems End Products Motor Control Load Switch DC/DC converter

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Low RDS(on)

Low QG and Capacitance

NVMFS6H818NWF − Wettable Flank Option

PPAP Capable

Compact Design

Minimize Conduction Losses

Minimize Driver Losses

Enhanced Optical Inspection

Automotive Qualified

Applications

Switching power supplies

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

48V systems

End Products

Motor Control

Load Switch

DC/DC converter

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NVMFS6H824NT1G
Channel Type N
Maximum Continuous Drain Current 103A
Maximum Drain Source Voltage 80V
Package Type DFN
Mounting Type Surface Mount
Pin Count 5
Maximum Drain Source Resistance 4.5mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 115W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Typical Gate Charge @ Vgs 38 nC @ 10 V
Maximum Operating Temperature +175°C
Width 6.1mm
Number of Elements per Chip 1
Length 5.1mm
Automotive Standard AEC-Q101
Height 1.05mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C

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