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ONSEMINVMJS1D3N04CTWGTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 235A
Mã nhà sản xuất
NVMJS1D3N04CTWG
Thương hiệu
Mã kho
185-8157
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK8 Package, Industry Standard PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK8 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free, Halogen Free/BFR Free

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NVMJS1D3N04CTWG
Channel Type N
Maximum Continuous Drain Current 235A
Maximum Drain Source Voltage 40V
Package Type LFPAK8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 1.3mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 128W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Width 4.9mm
Maximum Operating Temperature +175°C
Length 5mm
Typical Gate Charge @ Vgs 65 nC @ 10 V
Number of Elements per Chip 1
Automotive Standard AEC-Q101
Height 1.2mm
Minimum Operating Temperature -55°C
Forward Diode Voltage 1.2V

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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