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ONSEMINVMYS025N06CLTWGTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 21A
Mã nhà sản xuất
NVMYS025N06CLTWG
Thương hiệu
Mã kho
195-2552
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard PPAP Capable These Devices are Pb−Free

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NVMYS025N06CLTWG
Channel Type N
Maximum Continuous Drain Current 21A
Maximum Drain Source Voltage 60V
Package Type LFPAK, SOT-669
Mounting Type Surface Mount
Pin Count 4
Maximum Drain Source Resistance 43mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 24W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Width 4.25mm
Length 5mm
Typical Gate Charge @ Vgs 5.8 @ 10 V nC
Maximum Operating Temperature +175°C
Automotive Standard AEC-Q101
Height 1.15mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C

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