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ONSEMINVTFS6H854NTAGTransistor: N-MOSFET

Channel Mode EnhancementChannel Type NForward Diode Voltage 1.2VMaximum Continuous Drain Current 44A
Mã nhà sản xuất
NVTFS6H854NTAG
Thương hiệu
Mã kho
185-8163
Liên hệ
📩 Liên hệ để có giá tốt: CV@chanhvinh.com

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications. Small Footprint (3.3 x 3.3 mm) Low On-Resistance Low Capacitance NVTFS6H850NWF − Wettable Flanks Product PPAP Capable Compact Design Minimizes Conduction Losses Minimize Driver Losses Enhanced Optical Inspection Suitable for Automotive Applications Applications Reverser Battery protection Power switches (High Side Driver, Low Side Driver, H-Bridges etc.) Switching power supplies End Products Solenoid Driver – ABS, Fuel injection Motor Control – EPS, Wipers, Fans, Seats, etc. Load Switch – ECU, Chassis, Body

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (3.3 x 3.3 mm)

Low On-Resistance

Low Capacitance

NVTFS6H850NWF − Wettable Flanks Product

PPAP Capable

Compact Design

Minimizes Conduction Losses

Minimize Driver Losses

Enhanced Optical Inspection

Suitable for Automotive Applications

Applications

Reverser Battery protection

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Switching power supplies

End Products

Solenoid Driver – ABS, Fuel injection

Motor Control – EPS, Wipers, Fans, Seats, etc.

Load Switch – ECU, Chassis, Body

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. NVTFS6H854NTAG
Channel Type N
Maximum Continuous Drain Current 44A
Maximum Drain Source Voltage 80V
Package Type WDFN
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 14.5mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 68W
Transistor Configuration Single
Maximum Gate Source Voltage ±20V
Maximum Operating Temperature +175°C
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 13 nC @ 10 V
Width 3.15mm
Length 3.15mm
Forward Diode Voltage 1.2V
Minimum Operating Temperature -55°C
Height 0.75mm
Automotive Standard AEC-Q101

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