ONSEMITIP35CGBipolar (BJT) Single Transistor NPN 100 V 25 A 125 W TO-247 Through Hole
Collector Emitter Voltage Max 100VContinuous Collector Current 25ADC Current Gain hFE Min 15hFEPower Dissipation 125W
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Onsemi TIP35CG. Bipolar (BJT) Single Transistor NPN 100 V 25 A 125 W TO-247 Through Hole
Features:
- Bipolar (BJT) Single Transistor
- NPN
- 100 V
- 25 A
- 125 W
- TO-247
- Through Hole