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UMZ1NT1G 186-9000

ONSEMIUMZ1NT1GTransistor: NPN / PNP

Maximum Collector Emitter Voltage 50VMaximum DC Collector Current 200mAMaximum Emitter Base Voltage 7V dcMaximum Power Dissipation 385 mW
Mã nhà sản xuất
UMZ1NT1G
Thương hiệu
ONSEMI
Mã kho
186-9000
Liên hệ
📩 Liên hệ để có giá tốt: [email protected]

The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications. Pb-Free Package is Available

The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.

Pb-Free Package is Available

THÔNG SỐ KỸ THUẬT
Manufacturer onsemi
Manufacturer Part No. UMZ1NT1G
Transistor Type NPN/PNP
Maximum DC Collector Current 200mA
Maximum Collector Emitter Voltage 50V
Package Type SOT-363 (SC-88)
Mounting Type Surface Mount
Maximum Power Dissipation 385 mW
Minimum DC Current Gain 200
Transistor Configuration Dual
Maximum Emitter Base Voltage 7V dc
Pin Count 6
Number of Elements per Chip 2
Dimensions 2.2 x 1.35 x 1mm
Maximum Operating Temperature +150°C

Giá: Liên hệ – gửi mã và số lượng về [email protected] để nhận báo giá nhanh.

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