RENESAS ELECTRONICSHFA3096BZHFA3096BZ Pent NPN/PNP Transistor, 65 mA, 8 V, 16-Pin SOIC
Maximum Collector Emitter Voltage 8VMaximum DC Collector Current 65mAKiểu lắp Surface MountNumber of Elements per Chip 5
Liên hệ
The Renesas Electronics HFA3096 is an ultra high frequency transistor array that is fabricated from the Renesas complementary bipolar UHF-1 process. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors
NPN transistor (fT) 8GHz
NPN current gain (hFE) is 130
NPN early voltage (VA) is 50V
PNP transistor (fT) is 5.5GHz
PNP current gain (hFE) is 60
PNP early voltage (VA)is 20V
Noise figure (50Ω) at 1.0GHz is 3.5dB
Collector to collector leakage <1pA
Complete isolation between transistors