RENESASTP65H030G4PWSGallium Nitride (GaN) Transistor 650 V 55.7 A 0.041 ohm 24.5 nC TO-247 Through Hole
Continuous Drain Current Id 55.7ANo. of Pins 3PinsTransistor Case Style TO-247Transistor Mounting Through Hole
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Renesas TP65H030G4PWS. Gallium Nitride (GaN) Transistor 650 V 55.7 A 0.041 ohm 24.5 nC TO-247 Through Hole
Features:
- Gallium Nitride (GaN) Transistor
- 650 V
- 55.7 A
- 0.041 ohm
- 24.5 nC
- TO-247
- Through Hole