RENESASTP65H035G4YSGallium Nitride (GaN) Transistor 650 V 46.5 A 0.041 ohm 42.7 nC TO-247 Through Hole
Continuous Drain Current Id 46.5ANo. of Pins 4PinsTransistor Case Style TO-247Transistor Mounting Through Hole
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Renesas TP65H035G4YS. Gallium Nitride (GaN) Transistor 650 V 46.5 A 0.041 ohm 42.7 nC TO-247 Through Hole
Features:
- Gallium Nitride (GaN) Transistor
- 650 V
- 46.5 A
- 0.041 ohm
- 42.7 nC
- TO-247
- Through Hole