RENESASTP65H100G4PSGallium Nitride (GaN) Transistor 650 V 18.9 A 0.11 ohm 14.4 nC TO-220 Through Hole
Continuous Drain Current Id 18.9ANo. of Pins 3PinsTransistor Case Style TO-220Transistor Mounting Through Hole
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Renesas TP65H100G4PS. Gallium Nitride (GaN) Transistor 650 V 18.9 A 0.11 ohm 14.4 nC TO-220 Through Hole
Features:
- Gallium Nitride (GaN) Transistor
- 650 V
- 18.9 A
- 0.11 ohm
- 14.4 nC
- TO-220
- Through Hole