ROHMBM3G115MUV-LBE2BM3G115MUV-LBE2, 1High Side, Load Switch Power Switch IC 46-Pin, VQFN046V8080
The ROHM 650 V GaN HEMT Power Stage integrates a silicon driver within original package, significantly reducing parasitic inductance compared to traditional discrete solutions. It delivers a high switching slew rate of up to 150 V/ns, with adjustable gate drive strength to minimize EMI. Built-in protections and additional features help optimize cost and reduce PCB size. Designed for compatibility with major existing controllers, it serves as an efficient replacement for traditional discrete power switches such as super junction MOSFETs.
Wide operating range for VDD pin voltage
Wide operating range for IN pin voltage
Low VDD quiescent and operating current
Low propagation delay
Adjustable gate drive strength
Power good signal output
VDD UVLO protection
Thermal shutdown protection