ROHMBSM080D12P2C008Silicon Carbide MOSFET Half Bridge Dual N Channel 80 A 1.2 kV Module
Channel Type Dual N ChannelContinuous Drain Current Id 80AMOSFET Module Configuration Half BridgePower Dissipation 600W
Liên hệ
Rohm BSM080D12P2C008. Silicon Carbide MOSFET Half Bridge Dual N Channel 80 A 1.2 kV Module
Features:
- Silicon Carbide MOSFET
- Half Bridge
- Dual N Channel
- 80 A
- 1.2 kV
- Module
















