QS6M4TR Dual N/P-Channel MOSFET, 1.5 A, 20 (P Channel) V, 30 (N Channel) V, 6-Pin TSMT ROHM [QS6M4TR]; 168-2143
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | TSMT |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 430 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 1.25 W |
| Maximum Gate Source Voltage | ±12 V |
| Number of Elements per Chip | 2 |
| Width | 1.8mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +150 °C |
| Height | 0.95mm |
| Typical Gate Charge @ Vgs | 1.6 nC @ 4.5 V |
| Length | 3mm |