ROHMRD3L08CBLHRBTLRD3L08CBLHRB N-Channel MOSFET, 80 A, 60 V, 3-Pin DPAK RD3L08CBLHRBTL

The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.

Low on resistance of 5.3mΩ significantly improves energy efficiency

Supports up to 80A continuous drain current for robust performance in demanding applications

100% avalanche tested to ensure stability and reliability during operation

AEC Q101 qualified, making it suitable for automotive applications

Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions

Integrated thermal resistance of junction-case optimises power handling capabilities

Pb free and RoHS compliant, aligning with modern environmental standards.