ROHMSCS304AMC7G650V 4A, SiC Schottky Diode, 2-Pin TO-220FM-2LGE SCS304AMC7G
Diode Type SiC SchottkyMaximum Continuous Forward Current 4AKiểu lắp Through HoleNumber of Elements per Chip 1
Liên hệ
The ROHM Schottky Barrier Diode is engineered for high-performance applications, delivering exceptional efficiency in power conversion. With its cutting-edge silicon carbide (SiC) technology, this diode significantly reduces switching losses and enhances overall device reliability. Its robust design facilitates high-speed switching and offers a remarkable temperature stability, making it suitable for a wide range of demanding environments.
Capable of handling reverse voltage of up to 650 V ensuring safe operation
Robust packaging provides enhanced thermal management for durability
Ideal for applications in power factor correction and rectification systems