ROHMSCS308AMC7G650V 8A, SiC Schottky Diode, 2-Pin TO-220FM-2LGE SCS308AMC7G
Diode Type SiC SchottkyMaximum Continuous Forward Current 8AKiểu lắp Through HoleNumber of Elements per Chip 1
Liên hệ
The ROHM Schottky Barrier Diode marks a significant advancement in high-performance semiconductor technology. Designed to operate efficiently at elevated temperatures, it supports a robust 650V reverse voltage, making it ideal for PFC boost topologies and secondary side rectification in various applications.
Designed to withstand reverse voltages up to 650V enhancing reliability
Available in tube packaging for convenient handling and implementation
Compatibility with various circuit configurations enhances design flexibility