ROHMSCT3120ALGC11Silicon Carbide Power MOSFET N Channel 21 A 650 V 0.12 ohm 18 V 5.6 V
Channel Type N ChannelContinuous Drain Current Id 21AMOSFET Module Configuration SingleNo. of Pins 3Pins
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Rohm SCT3120ALGC11. Silicon Carbide Power MOSFET N Channel 21 A 650 V 0.12 ohm 18 V 5.6 V
Features:
- Silicon Carbide Power MOSFET
- N Channel
- 21 A
- 650 V
- 0.12 ohm
- 18 V
- 5.6 V