ROHMSCT4018KWATLSCT4018KWA N-Channel MOSFET, 75 A, 1200 V, 8-Pin D2PAK SCT4018KWATL

The ROHM N channel SiC power MOSFET, designed for efficient power management in a variety of applications. With a maximum drain-source voltage of 1200V and a low on-resistance of 18mΩ, this MOSFET optimises performance in high-efficiency systems like solar inverters and induction heating. It provides robust thermal management with a junction temperature range of up to 175°C, ensuring reliable operation even in demanding environments. The device features a fast switching speed, making it ideal for applications requiring high-frequency switching, thereby enhancing overall system efficiency and performance.

Low on resistance ensures minimal energy loss during operation

Supports fast switching speeds for improved efficiency

Designed for easy parallel operation, facilitating scalability

Robust thermal characteristics enable operation in extreme conditions

Pb free lead plating complies with RoHS standards for environmental safety

Wide creepage distance of 4.7 mm enhances reliability in high-voltage applications

Ideal for various applications including solar inverters and DC/DC converters